CLEANING METHOD BY ELECTROLYTIC SULFURIC ACID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of cleaning using sulfuric acid and a method of manufacturing a semiconductor are provided to increase the efficiency of a target by removing organic compound or metal from the target. CONSTITUTION: A method of cleaning using sulfuric acid comprises 1-3 steps. A first sulfuric acid is generated in a sulfuric acid electrolytic bath(1) at a first step. The first sulfuric acid solution contains a first sulfuric acid solution and an oxidative material. The sulfuric acid electrolytic bath has conductive diamond(11) as an anode and the sulfuric acid electrolytic bath as a cathode. In this case, first sulfuric acid is generated by supplying first sulfuric acid solution from a cathode chamber. A cleaning solution is generated in sulfuric acid electrolytic bath at a second step. The cleaning solution contains a first and second sulfuric acid.