| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic element for conducting a flux reversal of magnetization of a magnetic electrode without supplying a current to a magnetic element body, and to provide an integrated circuit and a magnetic random access memory. <P>SOLUTION: The magnetic element 1 places a first ferromagnetic electrode 3 and a second ferromagnetic electrode 4 on a substrate 6 at intervals, and arranges those so as to contact an electrode 5 having a high spin hole effect to a magnetic element body 2 and the ferromagnetic electrode 3 to supply the current to the electrode 5 having the high spin effect, spin-injecting to magnetization-invert the first ferromagnetic electrode 3. Supplying the current to the electrode 5 having the high spin hole effect without supplying the current to the magnetic element body 2 generates the spin polarization by the spin hole effect to be able to conduct the flux reversal of magnetization with a migration to the first ferromagnetic electrode 3. The flux reversal of magnetization of a reconfigurable micromagnetic logic element with a high impedance micromagnetic memory element, the magnetic logic element, and the spin field effect transistor connected in multiple-stage manner is obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
