| 摘要 |
PROBLEM TO BE SOLVED: To analyze and design a precise semiconductor device more precisely. SOLUTION: The apparatus for analyzing and designing the semiconductor device includes: a storage unit 3 which relates and stores constitution information of a transistor and measured values of electric characteristics of the transistor; a density distribution setting unit 11 which assumes a function indicating a depth-directional impurity density distribution of a channel region of the first transistor; an element characteristic calculation unit 12 which sets up a Poisson equation using the function, solves the Poisson equation using a depletion layer width as a variable to calculate a surface potential, and determines calculated values of electric characteristics of the first transistor; and a determination unit 13 which reads the measured values corresponding to first constitution information of the first transistor by reference to the storage unit 3 on the basis of the first constitution information, determines that the function is an impurity density distribution of the first transistor when the measured values and calculated values coincide with each other, and stores it in the storage unit 3. The density distribution setting unit 11 and element characteristic calculation unit 12 continue the execution of the operations until the calculated values and measured values coincide with each other. COPYRIGHT: (C)2010,JPO&INPIT
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