| 摘要 |
The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.
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