| 摘要 |
The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.
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