| 摘要 |
<p>PURPOSE: A power device with monolithically integrated RC snubber is provided to use an RC snubber, so there is no need to have a capacitor and a resistance. CONSTITUTION: A semiconductor structure comprises an RC snubber and a power transistor. The RC snubber and the power transistor are integrated inside the semiconductor structure in a monolithic. In this case, the power transistor has a body region(908), gate electrodes(906), a source region(918), and a source interconnect(912). The body regions are expanded into the silicon region(902). The gate electrodes are insulated from the body regions through a gate dielectric(920). The sources are expanded inside the body region and have a reverse polarity to the body regions. The source interconnect is contacted with source regions.</p> |
