| 摘要 |
<p>PURPOSE: A method for manufacturing of a high voltage transistor is provided to form a uniform pattern of a gate insulating by forming the gate insulating layer after forming a trench in a gate line direction. CONSTITUTION: In a method for manufacturing of a high voltage transistor, a hard mask film is formed on the semiconductor substrate including a second part excepting the first area in which the high voltage transistor is formed and the first area. A first area of the semiconductor substrate and a hard mask film is etched and the trench is formed into the gate line direction. A gate insulating layer(104) is formed on the overall structure including the trench. The gate insulating layer and the semiconductor substrate formed on the element isolation region of the semiconductor substrate are etched and the element isolating trench is formed. The element isolating trench is filled with the insulating layer and the element isolation film(105) is formed. The gate conductive film(106) is formed on the gate insulating layer and the element isolation film formed on the first area.</p> |
