发明名称 CONTROLLED VALUE REFERENCE SIGNAL OF RESISTANCE BASED MEMORY CIRCUIT
摘要 <p>Systems and methods of controlled value reference signals of resistance based memory circuits are disclosed. In a particular embodiment, a circuit device is disclosed that includes a first input configured to receive a reference control signal. The circuit device also includes an output responsive to the first input to selectively provide a controlled value reference voltage to a sense amplifier coupled to a resistance based memory cell.</p>
申请公布号 WO2010002637(A1) 申请公布日期 2010.01.07
申请号 WO2009US48301 申请日期 2009.06.23
申请人 QUALCOMM INCORPORATED;JUNG, SEONG-OOK;KIM, JISU;SONG, JEE-HWAN;KANG, SEUNG, H.;YOON, SEI, SEUNG 发明人 JUNG, SEONG-OOK;KIM, JISU;SONG, JEE-HWAN;KANG, SEUNG, H.;YOON, SEI, SEUNG
分类号 G11C11/16 主分类号 G11C11/16
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