发明名称 PROCESS FOR PRODUCTION OF AlXGa(1-X)N SINGLE CRYSTAL, AlXGa(1-X)N SINGLE CRYSTAL AND OPTICAL LENSES
摘要 <p>A process for the production of an AlxGa(1-x)N single crystal (10) (wherein 0xGa(1-x)N single crystal (10) by a sublimation method, which comprises the step of preparing a substrate, the step of preparing a high-purity raw material, and the step of sublimating the raw material to grow an AlxGa(1-x)N single crystal (10) on the substrate.  The AlxGa(1-x)N single crystal (10) exhibits a refractive index of 2.4 or above for  a light having a wavelength of 250 to 300nm and a refractive index of 2.3 or above for a light having a wavelength which exceeds 300nm and is shorter than 350nm, each refractive index being determined at 300K.</p>
申请公布号 WO2010001803(A1) 申请公布日期 2010.01.07
申请号 WO2009JP61609 申请日期 2009.06.25
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;ARAKAWA, SATOSHI;SAKURADA, TAKASHI;YAMAMOTO, YOSHIYUKI;SATOH, ISSEI;TANIZAKI, KEISUKE;NAKAHATA, HIDEAKI;MIZUHARA, NAHO;MIYANAGA, MICHIMASA 发明人 ARAKAWA, SATOSHI;SAKURADA, TAKASHI;YAMAMOTO, YOSHIYUKI;SATOH, ISSEI;TANIZAKI, KEISUKE;NAKAHATA, HIDEAKI;MIZUHARA, NAHO;MIYANAGA, MICHIMASA
分类号 C30B29/38;C30B23/06;G02B1/02;G02B3/00 主分类号 C30B29/38
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