| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition for liquid immersion lithography, which is reduced in developing defect with minimized line edge roughness or deterioration of profile even in formation of a fine pattern (particularly, a line width of 100 nm or less); and to provide a pattern forming method using the same. <P>SOLUTION: The resist composition for liquid immersion lithography contains (A) a resin having a repeating unit having a specific cycloalkyl group and having a group of a specific structure at least at one terminal of the molecular chain, the resin being decomposed by the effect of acid to increase the solubility in an alkali developer; and (B) a compound which generates acid by irradiation with active light beam or radial ray. The pattern forming method uses this resist composition. <P>COPYRIGHT: (C)2010,JPO&INPIT |
