| 摘要 |
PROBLEM TO BE SOLVED: To provide a bottom contact type organic thin-film transistor having low threshold voltage, high field effect mobility and a high on/off current ratio. SOLUTION: The bottom contact type organic thin-film transistor comprises at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer on a substrate. At least the source electrode or the drain electrode has a laminated structure of an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin-film layer. COPYRIGHT: (C)2010,JPO&INPIT
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