| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD film deposition method and a plasma CVD apparatus capable of suppressing damages of a substrate attributable to the heat and reactive gas ions in the capacitively coupled plasma CVD, and depositing a dense film of excellent quality with the high coatability. SOLUTION: The high frequency power having the frequency of HF-VHF band is supplied to a first electrode with a substrate being arranged thereon, and the power having the frequency which is lower than that of the power to be supplied to the first electrode and≤13.56 MHz or the DC pulse power of the pulse frequency is supplied to solve the problem. COPYRIGHT: (C)2010,JPO&INPIT
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