SINTERED BODY FOR A P-TYPE ZINC OXIDE COMPOUND SEMICONDUCTOR MATERIAL, AND A PRODUCTION METHOD FOR THIN FILMS AND THICK FILMS USING THE SAME

摘要

The present invention relates to a sintered body for a p-type zinc oxide compound semiconductor material and to a production method for thin films and thick films using the same. More particularly its technical essence lies in a sintered body for a p-type zinc oxide compound semiconductor material, characterised in that the zinc oxide compound is formed from a mixture of zinc oxide (ZnO) and a molecule of a second compound, and in that the molecule of a second compound comprises at least one such molecule chosen from the group comprising lithium oxide (Li2O), lithium fluoride (LiF), lithium chloride (LiCl), sodium oxide (Na2O), sodium fluoride (NaF), sodium chloride (NaCl), potassium oxide (K2O) potassium fluoride (KF), and trivalent metal oxides with which divalent metal oxides can coexist, and divalent metal oxides with which monovalent metal oxides can coexist. The technical essence of the present invention also lies in a production method for thin films and thick films using such a sintered body. According to the present invention, thin films and thick films are produced by using a sintered body comprising a mixture of zinc oxide and a molecule of a second compound, which is advantageous in that the invention can be widely used for electronic elements and light-emitting elements employed in, by way of example, materials for light emitting diodes, or p-type semiconductor materials and electrically conductive materials which are transparent, and in that it allows outstanding reproducibility and production efficiency even while the operation of forming films by sputtering or the like is stable.