SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method of fabricating the same are provided to improve the gap fill performance by forming a hybrid structure with the bottom element isolation film and the top element isolation film. CONSTITUTION: In a semiconductor device and a method of fabricating the same, a semiconductor substrate has a trench defining an active area. A first element isolation film(120a) fills the lower part of the trench. A second element isolation film(122a) fills the top of the trench. The first element isolation film comprises TOnen SilaZene. The second element isolation film comprises the high density plasma oxide. The volume ratio of the high density plasma oxide and Tonen Silazane is 3:7 ~ 7:3.