发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To improve productivity while ensuring stability of a pod. Ž<P>SOLUTION: When a positive pressure transfer device collects a treated wafer W into a pod P, an optimization program reads a wafer temperature T1 at a point of time to start first feed-out from a parameter storage unit (S1), reads out a thermal resistance guarantee temperature T2 of the pod P (S2), reads out a wafer drop temperature T3 per unit time (S3), and next reads a first feed-out start time and the present time from a time storage unit (S4). An elapsed time operation unit operates a difference between the first feed-out starting time and the present time and defines a resultant value as a feed-out elapsed time t2 (S5). A required cooling time operation unit operates an optimum drop temperature T4 in accordance with T4=(T1-T2)-(T3×t2) (S6) and operates a required cooling time t1 to the pod thermal resistance guarantee temperature in accordance with t1=T4/T3 (S7). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010003920(A) 申请公布日期 2010.01.07
申请号 JP20080162063 申请日期 2008.06.20
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 FUNAKURA MITSURU;YASHIMA TSUKASA
分类号 H01L21/677 主分类号 H01L21/677
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