发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To suppress occurrence of rolloff at an edge part of a wafer, by utilizing sheet etching, promoting iterative use of etching liquid used for it, relating to a semiconductor wafer along with its manufacturing method and manufacturing device. SOLUTION: The manufacturing method of a semiconductor wafer comprises a sheet-etching step in which an etching liquid is jetted to the surface of a wafer, while it is rotated for performing etching. The sheet-etching step comprises a first etching step in which etching is performed on the surface of a wafer under, such a condition as suppresses initial reaction after etching, is started at the outer peripheral part of the wafer only, during a predetermined period after the start of etching, and a second etching step in which, after the first etching step, etching has been performed on the surface of the wafer so as to obtain a preset thickness distribution across the radial direction of the wafer. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010003847(A) 申请公布日期 2010.01.07
申请号 JP20080160942 申请日期 2008.06.19
申请人 SUMCO CORP 发明人 KOYADA SAKAE;KATO TAKEO;MURAYAMA KATSUHIKO;HASHII TOMOHIRO;TAKAISHI KAZUNARI
分类号 H01L21/306;H01L21/02 主分类号 H01L21/306
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