| 摘要 |
A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least part of the elementary body therebetween. The elementary body is made of a semiconductor ceramic expressed by a formula: {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 (wherein M represents at least one of Ba and Ca, A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies 0<x<=0.5 and 0.001<=y+z<=0.02 (where 0<=y<=0.02 and 0<=z<=0.02); 0.5<x<=0.8 and 0.003<=y+z<=0.02 (where 0<=y<=0.02 and 0<=z<=0.02); or 0.8<x<=1.0 and 0.005<=y+z<=0.01 (where 0<=y<=0.02 and 0<=z<=0.02).
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