| 摘要 |
PROBLEM TO BE SOLVED: To efficiently manufactures a semiconductor device having high reliability. SOLUTION: When a ferroelectric capacitor 31 is formed on a silicon substrate 1, a first protection film 27 is formed as a hard mask on a second electrode film 25. An upper electrode 28 is formed by etching the second electrode film 25 using the first protection film 27 as a mask. Then the first protection film 27 is not removed, but oxidized from a film surface side. Consequently, the first protection film 27 has higher oxygen density in an upper region above in a stacking direction than in other regions, and serves as a diffusion preventive film which prevents a reductive substance such as hydrogen and water from penetrating the ferroelectric capacitor 31. COPYRIGHT: (C)2010,JPO&INPIT |
