发明名称 |
PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE |
摘要 |
A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially competent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.
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申请公布号 |
US2010001289(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20090467986 |
申请日期 |
2009.05.18 |
申请人 |
FRAYSSINET ERIC;BEAUMONT BERNARD;FAURIE JEAN-PIERRE;GIBART PIERRE |
发明人 |
FRAYSSINET ERIC;BEAUMONT BERNARD;FAURIE JEAN-PIERRE;GIBART PIERRE |
分类号 |
H01L29/20;C30B28/12 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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