| 摘要 |
A transistor arrangement including a triple well structure, the triple well structure including a substrate of a first conductivity type, a first well region of a second conductivity type formed within the substrate and a second well region of the first conductivity type being separated from the substrate by the first well region. The transistor arrangement further includes a first transistor formed on or in the second well region, the first transistor including a body terminal being connected to the second well region and a second well region switch being connected to the body terminal of the first transistor.
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