发明名称 |
METHOD OF PREPARING AN ELECTRICAL INSULATION FILM AND APPLICATION FOR THE METALLIZATION OF THROUGH-VIAS |
摘要 |
The present invention relates essentially to a method of preparing an electrical insulating film on the surface of an electrically conducting or semiconducting substrate, such as a silicon substrate. According to the invention, this method comprises the following: a) said surface is brought into contact with a liquid solution comprising: a protic solvent, at least one diazonium salt, at least one in-chain polymerizable monomer soluble in said protic solvent, and at least one acid in an amount sufficient to stabilize said diazonium salt by adjusting the pH of said solution to a value below 7, preferably below 2.5; and b) said surface is polarized in pulse potentiostatic or galvanostatic mode for a time sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: metallization of through-vias, especially for 3-D integrated circuits. |
申请公布号 |
WO2010001054(A2) |
申请公布日期 |
2010.01.07 |
申请号 |
WO2009FR51279 |
申请日期 |
2009.07.01 |
申请人 |
ALCHIMER;MEVELLEC, VINCENT;GONZALEZ, JOSE;SUHR, DOMINIQUE |
发明人 |
MEVELLEC, VINCENT;GONZALEZ, JOSE;SUHR, DOMINIQUE |
分类号 |
C09D5/44;C25D7/12;C25D13/04;C25D13/08;H01L21/02;H01L21/288;H01L23/52 |
主分类号 |
C09D5/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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