发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
PURPOSE: An apparatus for depositing an atomic layer is provided to prevent the inflow of the deposition gas from a spray region to an exhaust unit by arranging the spray region for spraying the deposition gas and the exhaust unit on different planes in a shower head. CONSTITUTION: A susceptor(120) is rotatably included in a process chamber. One substrate or more are received in the susceptor. A shower head is included on an upper side of the substrate. A plurality of spray regions for spraying the deposition gas to the substrate are formed on the shower head. An exhaust unit(150) is included in the shower head and includes an exhaust line. The exhaust line includes a plurality of exhaust holes exhausting the exhaust gas from the processor chamber. A projection part(511) is included around the exhaust line and is protruded from the surface of the shower head with a preset height.
|
申请公布号 |
KR20100002885(A) |
申请公布日期 |
2010.01.07 |
申请号 |
KR20080062936 |
申请日期 |
2008.06.30 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
JUN, YOUNG SU;SUNG, MYUNG EUN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|