| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which has an excellent power-cycle life time. <P>SOLUTION: With respect to the power semiconductor device, a plurality of cell structures of the vertical power devices are formed in a semiconductor substrate 1. One cell structure of the plurality of cell structures which locates in a central portion CR of the principal surface of the semiconductor substrate 1 is constituted so that it has a current application lower than the ones of the other cell structures which locate in an outer peripheral portion PR of the principal surface of the semiconductor substrate 1. <P>COPYRIGHT: (C)2010,JPO&INPIT |
