| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the surface roughness of a TiN film as a lower electrode without steps such as chemical mechanical polishing, sputtering by Ar, deposition of Ta film, etc. <P>SOLUTION: A thin-film capacitor is arranged on a semiconductor substrate (10). It includes lower electrodes (21a, 22a) of which at least a surface layer section is formed of amorphous or microcrystal metal, an dielectric film (23a) arranged on the lower electrodes, and an upper electrode (24a) arranged on the dielectric film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
