| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide SRAMs and logic circuits on the same integrated circuit, using combinations of a HOT (hybrid orientation technology) process and STI (shallow trench isolation region) between individual devices. Ž<P>SOLUTION: A plurality of SRAMs (1208) are formed on HOT substrates with STI, and a plurality of logic circuits are formed on the same chip, with some devices on a plurality of SOI (1202) regions and other devices on the plurality of SOI (1202) regions. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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