| 摘要 |
PROBLEM TO BE SOLVED: To analyze and design a precise semiconductor device more precisely. SOLUTION: The apparatus for analyzing and designing semiconductor device includes a storage unit 2 which relates and stores constitution information of a transistor and measured values of electric characteristics, a parameter setting unit 11 which divides a channel region of the first transistor into a plurality of regions and sets impurity densities of the respective regions as parameters, an element characteristic calculation unit 12 which calculates effective impurity densities obtained by decreasing impurity densities in both end regions of the channel region on the basis of the parameters and determines first calculated values of electric characteristics of the first transistor from a surface potential calculated by a Poisson equation using the effective impurity densities, and a determination unit 13 which stores the parameters as parameters of the first transistor in the storage unit 2 associatively with the constitution information when the measured values read out of the storage unit 2 coincide with the first calculated values. The density distribution setting unit 11 and element characteristic calculation unit 12 continue the execution of the operations until the first calculated values and measured values coincide with each other. COPYRIGHT: (C)2010,JPO&INPIT
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