发明名称 |
ATOMIC LAYER DEPOSITION EPITAXIAL SILICON GROWTH FOR TFT FLASH MEMORY CELL |
摘要 |
A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. The second hydrogen-terminated silicon surface is capable of being added one or more layer of silicon through ALD epitaxy from SiH4 thermal cracking radical assisted by Ar flow and flash lamp annealing continuously. In one embodiment, the method is applied for making devices with thin-film transistor (TFT) floating gate memory cell structures which is capable for three-dimensional integration.
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申请公布号 |
US2010001334(A1) |
申请公布日期 |
2010.01.07 |
申请号 |
US20080259128 |
申请日期 |
2008.10.27 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
MIENO FUMITAKE |
分类号 |
H01L29/786;H01L21/36;H01L21/8232 |
主分类号 |
H01L29/786 |
代理机构 |
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