发明名称 METHOD FOR DEPOSITING LAYERS IN A CVD REACTOR AND GAS INLET ELEMENT FOR A CVD REACTOR
摘要 The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber (7) in the form or at least two gases by means of a gas inlet element. The gases are introduced into respective chambers (1, 2) of the gas inlet element that arranged one on top of the other and enter the process chamber (7) through gas outlet openings (3, 4) leading to the process chamber (7). The aim of the invention is to improve the aforementioned method or aforementioned device for producing homogeneous layers. For this purpose, each of the two chambers is subdivided into two compartments (1a, 1b; 2a, 2b) each which are arranged one on top of the other to be substantially congruent. The two process gases enter the process chamber separately from each other in the circumferential direction so that the substrates (10) lying on substrate supports (9), arranged in a ring and forming the base of the process chamber (7), are subsequently exposed to different process gases following a rotation of the substrate support (9) about its axis (9').
申请公布号 US2010003405(A1) 申请公布日期 2010.01.07
申请号 US20060094254 申请日期 2006.11.21
申请人 KAEPPELER JOHANNES 发明人 KAEPPELER JOHANNES
分类号 B05D1/00;C23C16/54 主分类号 B05D1/00
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