| 摘要 |
PURPOSE: An internal voltage generation circuit of a semiconductor memory device is provided to reduce overall power consumption by reducing the current consumed in a read and write operation. CONSTITUTION: An external voltage sensor(140) senses the level of an external power voltage. A first pumping unit(135) pumps the external voltage once. A second pumping unit(137) pumps the external power voltage twice. A selection operation unit(150) selectively operates the first pumping unit or the second pumping unit according to the level of the external power voltage sensed from the external voltage sensor. |
