| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting diode element that improves the efficiency of emission, when a current is injected with high current density, and to provide a method of manufacturing the same. <P>SOLUTION: A nitride semiconductor light-emitting diode element includes an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and a nitride semiconductor active layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein the nitride semiconductor active layer has a multiple quantum well structure including two or more periods of multilayer structure of a well layer, an interlayer and a barrier layer, the barrier layer is a nitride semiconductor layer containing In, the interlayer is a nitride semiconductor layer where the mixed crystal ratio of In is lower than that of the barrier layer, and the interlayer is also provided between the multilayer structures. The method of manufacturing the nitride semiconductor light-emitting diode element is also provided. <P>COPYRIGHT: (C)2010,JPO&INPIT |
