| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem wherein, since a thick-film AlGaAs layer is directly grown on a GaAs growth substrate, a fracture, a crack or the like may occur due to a lattice mismatch between them. <P>SOLUTION: In this semiconductor device, an AlGaInP negative strain layer 11 and an AlGaAs mixed crystal prevention layer 12 are grown on the GaAs growth substrate 1 by a vapor-phase growth method, and thereafter the thick-film AlGaAs layer 2 is grown by a liquid-phase growth method. <P>COPYRIGHT: (C)2010,JPO&INPIT |
