| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain both a self pulsation operation characteristic and static characteristics which are to be required, by preventing the self pulsation operation from being weakened or stopped by the transparency or reduction of a saturable absorption region with a diffusion current in a high-temperature operation, and to improve the instability of a pattern in a near-field image. Ž<P>SOLUTION: A GaN-base semiconductor layer 12 forming a laser structure is made to grow on an n-type GaN substrate 11 including as main surfaces: first plane region 11a composed of a C surface; a second plane region 11b composed of a semipolar surface; and a third plane region 11c composed of a C surface. A ridge stripe 13 is formed on the GaN-base semiconductor layer 12 in the upper part of the second plane region 11b. The In composition of an active layer 12b in both the side parts of the ridge stripe 13 is higher than that of the active layer 12b in a part corresponding to the ridge stripe 13, or the thickness of the active layer 12b in the both side parts of the ridge stripe 13 is larger than that of the active layer 12b in the part corresponding to the ridge stripe 13. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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