发明名称 |
METHOD AND DEVICE FOR EXTRACTING PARAMETER |
摘要 |
PROBLEM TO BE SOLVED: To provide an environment enabling a precise circuit simulation by precisely extracting the parameter in the equivalent circuit model of a field-effect transistor used for a power converting circuit with a relatively simple method. SOLUTION: In the equivalent circuit model of a field effect transistor used for a power converting circuit, the capacitance Cgs between the gate and the source, the capacitance Cgd between the gate and the drain, and the channel current source Ich are extracted from the switching waveform in the inductive load of the field effect transistor. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010002202(A) |
申请公布日期 |
2010.01.07 |
申请号 |
JP20080158993 |
申请日期 |
2008.06.18 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
NAKAJIMA AKIRA;TAKAO KAZUTO;OHASHI HIROMICHI |
分类号 |
G01R31/26;H01L21/336;H01L21/338;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|