发明名称 DYNAMICALLY-DRIVEN DEEP N-WELL CIRCUIT
摘要 A circuit includes an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, and a first well switch configured to selectively connect the n-well to a predetermined voltage in response to an enable phase of a first switching signal. The first well switch can be configured to connect the n-well to the predetermined voltage during the enable phase of the first switching signal and to electrically float the n-well during a non-enable phase of the first switching signal.
申请公布号 US2010001787(A1) 申请公布日期 2010.01.07
申请号 US20080166559 申请日期 2008.07.02
申请人 BRUNSILIUS JANET M;KOSIC STEPHEN R;PETERSEN COREY D 发明人 BRUNSILIUS JANET M.;KOSIC STEPHEN R.;PETERSEN COREY D.
分类号 H03K3/01;H01L21/336 主分类号 H03K3/01
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