HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO [2,3-D:2',3'-D']BENZO[1,2-B:4,5-B'] DITHIOPHENE

摘要

Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) -CN, d) -NO2, e) - OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a -Y- C3-10 cycloalkyl group, m) a -Y-C6-14 aryl group, n) a -Y-3-12 membered cyclo- heteroalkyl group, or o) a -Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc- loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1 -4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.