| 摘要 |
PURPOSE: A sense amplifier driving circuit for a semiconductor memory apparatus and a driving method thereof are provided to secure the performance of a semiconductor memory device by supplying a high level voltage at an early sensing time. CONSTITUTION: In a device, an overdrive signal generator(110) generates a first and a second overdrive signal according to a sense amp enable signal. A high voltage driver(200) supplies a first high voltage for a section where the first overdrive signal is enabled to a sense amplifier. The high voltage driver supplies the second high voltage for a section where the second overdrive signal is enabled to the sense amplifier. The overdrive signal generator enables the second overdrive signal later than the first overdrive signal. The overdrive signal generator firstly disables the second overdrive signal earlier than first overdrive signal. |
