发明名称 CAPACITOR AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A capacitor and a fabricating method thereof are provided to set capacitance easily by forming the both electrode which is formed with a poly-silicon on the substrate in parallel with each other. CONSTITUTION: In a capacitor and a fabricating method thereof, a polysilicon electrodes(120) are arranged on a substrate in parallel with each other. An insulating layer is formed between polysilicon electrodes, and the insulating layer is included of the silicon oxide film(140) covering the side of the polysilicon electrode and the silicon nitride film(150) covering the side of the silicon oxide film.
申请公布号 KR20100002694(A) 申请公布日期 2010.01.07
申请号 KR20080062672 申请日期 2008.06.30
申请人 DONGBU HITEK CO., LTD. 发明人 HWANG, MUN SUB
分类号 H01L27/04 主分类号 H01L27/04
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