SILICON CARBIDE PRODUCT, MANUFACTURING METHOD THEREOF AND SILICON CARBIDE PRODUCT CLEANING METHOD

摘要

PROBLEM TO BE SOLVED: To inquire into the cause for not obtaining the characteristics as estimated by a logic value, in a semiconductor device, or the like, which uses silicon carbide.

SOLUTION: It is found that the metal impurity concentration is high on the silicon carbide surface, and deterioration of the characteristics can be substantially prevented, by reducing the metal impurity concentration on the surface to a value which is less than 1×1011(atoms/cm2). The silicon carbide, having such a high-cleanliness surface, is obtained by cleaning it with an aqueous solution containing sulfuric acid and hydrogen peroxide.

COPYRIGHT: (C)2010,JPO&INPIT