| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD system which can prevent the phenomenon that a film peeled from the outer circumferential part of a wafer sticks to a color ring as foreign matters, and to provide a method for producing a semiconductor device. SOLUTION: Regarding the high density plasma CVD system, film deposition and etching are simultaneously or repeatedly performed, so as to form a film having high implantation properties on a wafer, and which comprises: an electrostatic chuck 2 holding a wafer 21 and having a size smaller than that of the wafer 21; and a collar ring 1b installed so as to surround the side wall of the electrostatic chuck 2. The collar ring 1b comprises a confronted part 40a confronted with the side wall of the electrostatic chuck 2 and located at the lower part of the outer circumferential part of the wafer, the confronted part 40a is formed so as to surround the side wall of the electrostatic chuck, and, to the electrostatic chuck 2 in the confronted part 40a, the outside is located at the inside than the outermost part of the outer circumferential part in the wafer. COPYRIGHT: (C)2010,JPO&INPIT |
