GROWTH OF PLANAR NONPOLAR GALLIUM NITRIDE BY HYDRIDE-VAPOR PHASE GROWING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a GaN thick film of high quality suitable for use as a regrown substrate for a homoepitaxial element layer. SOLUTION: The method of manufacturing a group III nitride film includes a process of growing a nonpolar group III nitride film on a growth surface of the substrate, wherein the growth surface of the substrate is not nonpolar and a flat mirror surface is formed on an upper surface of the nonpolar group III nitride film. Especially, an extremely planar nonpolar (a)-plane GaN film is grown by a halide vapor-phase growing method (HVPE). The obtained film is suitable for regrowing elements sequentially by various growth techniques. COPYRIGHT: (C)2010,JPO&INPIT