发明名称 PHASE-CHANGE MEMORY CELL WITH A PATTERNED LAYER
摘要 A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions ("hot spot") than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.
申请公布号 US2010001248(A1) 申请公布日期 2010.01.07
申请号 US20060914638 申请日期 2006.05.18
申请人 NXP B.V.;INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM 发明人 WOUTERS DIRK JOHAN;GOUX LUDOVIC;LISONI JUDITH;GILLE THOMAS
分类号 H01L47/00;H01L21/06 主分类号 H01L47/00
代理机构 代理人
主权项
地址