| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate that reduces a residual material on notch angular parts and improves the crystal growth yield on the nitride semiconductor substrate. <P>SOLUTION: In the nitride semiconductor substrate 1 in which a notch 3 to specify the crystal orientation and both sides is formed on the outer periphery of a circular nitride semiconductor substrate body 2, the notch 3 composed of a plurality of sides is so formed on the outer periphery of the nitride semiconductor substrate body 2 that an orientation side 4 indicating a crystal orientation of the notch 3 is made to coincide with the crystal orientation within ±0.3°; an angle θ made by a front and rear distinguishing side 6 to specify both sides and the orientation side 4 is made larger that 90°; and a curvature radius of an intersection point between each side is made equal to or larger than 0.1 mm. <P>COPYRIGHT: (C)2010,JPO&INPIT |
