| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level; and to provide a semiconductor device obtained by the same. SOLUTION: The manufacturing method comprises steps of: adding a catalytic element to a semiconductor film and heating the semiconductor film to form a more crystallized first region; forming a less crystallized second region than the first region; irradiating the first region with the first laser light to form a more crystallized third region than the first region; irradiating the second region with second laser light to form a more crystallized fourth region than the second region; and patterning the third region to form a first island-shaped region and the fourth region to form a second island-shaped region, wherein the first laser light has the same energy density from the second laser light, and a scan speed of the first laser light is faster than that of the second laser light. COPYRIGHT: (C)2010,JPO&INPIT |
