| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface light-emitting semiconductor laser device which is two-dimensionally arranged, and has few coupling loss and high light-emitting efficiency. Ž<P>SOLUTION: The semiconductor laser device includes a laminated structure 31 of a nitride semiconductor, which is formed on a substrate 11 and includes a stripe-like optical waveguide 32 extending in parallel to a main face of the substrate 11. A reflection mirror 34 reflecting light transmitted through the optical waveguide 32 in a direction vertical to the main face of the substrate 11 is formed in at least one end face of the optical waveguide 32. A light transmission film 35 having an effective refractive index distribution whose effective refractive index is smaller in an outer edge part compared to a center part is formed in an optical outgoing region where light reflected by the reflection mirror 34 in the laminated structure 31 is output. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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