| 摘要 |
A method for fabricating a flash memory device includes forming a control gate having a hollow donut shape over an insulation layer formed over a substrate. The method also includes forming an inter-poly dielectric of a spacer shape on an inner wall of the control gate, filling a conductive layer for a floating gate between the spacer shaped inter-poly dielectrics, and forming an interlayer insulation layer over a resulting product formed with the conductive layer for a floating gate. The method further includes removing a center portion of the conductive layer for a floating gate to form an opening, forming a tunnel insulation layer on an inner face of the opening, and filling with a semiconductor layer the opening formed with the tunnel insulation layer to form an active region.
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