发明名称 FLOTOX-TYPE EEPROM
摘要 In designing a FLOTOX EEPROM of a dual cell type, a consideration should be given to the layout of cells for microminiaturization of the FLOTOX EEPROM. The FLOTOX EEPROM of the dual cell type includes two paired floating gates (25a, 25b), two tunnel windows (33a, 33b) a shared source (27), a shared control gate (26), select gates (29a, 29b), and a shared drain 28. Thus, a higher reliability design and a higher breakdown voltage design are achieved for the FLOTOX EEPROM of the dual cell type.
申请公布号 US2010002524(A1) 申请公布日期 2010.01.07
申请号 US20080449169 申请日期 2008.01.28
申请人 SEKIGUCHI YUSHI 发明人 SEKIGUCHI YUSHI
分类号 G11C16/04 主分类号 G11C16/04
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