| 摘要 |
<p>PURPOSE: A substrate processing method and a substrate processing apparatus are provided to convert an amorphous silicon film into a single crystallization film through a solid epitaxial in the traverse direction. CONSTITUTION: A substrate processing apparatus(10) comprises a process chamber(201), a heating unit(206), and gas supply parts(180,181,182). A treatment unit processes a plurality of substrates. The heating unit heats the substrates inside a plurality of process chambers. The gas supply unit supplies the first and second gas into the process chamber. The substrate processing apparatus more includes an exhausting unit(231) and a controller(240). The exhausting unit discharges the gas inside the process chamber. The controller controls the gas supply unit.</p> |
