| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element which has high crystallinity and superior internal quantum efficiency, and ensures a high light emission output, to provide a method of manufacturing the same, and to provide a lamp. <P>SOLUTION: An AlN seed layer 12 made of a group III nitride-based compound is laminated on a substrate 11, and an n-type semiconductor layer 14 made of a group III nitride semiconductor, a light emitting layer 15 and a p-type semiconductor layer 16 are laminated in order, wherein an X-ray locking curve half-value width on a (0002) plane of the p-type semiconductor layer 16 is ≤60 arcsec and an X-ray locking curve half-value width on a (10-10) plane is ≤250 arcsec. <P>COPYRIGHT: (C)2010,JPO&INPIT |
