| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer and method of manufacturing the same capable of preventing the occurrence of the surface defect of the epitaxial film and a slip of the outer circumferential part of the film, and capable of lowering its manufacturing cost in having a gettering site. SOLUTION: An imperfect embedded oxide film 12 is formed in the surface layer by decreasing an ion implantation amount of oxygen in the surface layer of a silicon wafer 11 and heat-treating an ion implantation layer 15 during low temperature epitaxial growth. This lowers the cost of the wafer 11. The occurrence of a pit of an epitaxial film 14 is restrained to decrease the surface defect of the film 14 even though the oxide film ends because of a problem in the ion implantation. In addition, the thickening of the outer circumferential part of the film 14 is prevented to restrain the slip of the outer circumferential part of the wafer. Furthermore, as the imperfect embedded oxide film 12 doubles as the gettering site to prevent the metallic contamination of the epitaxial wafer 10. COPYRIGHT: (C)2010,JPO&INPIT
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