| 摘要 |
The invention relates to a heterojunction solar cell (1) and a method for the production thereof. The heterojunction solar cell has an absorber layer (3) made of silicon with a basic doping and at least one heterojunction layer (5, 7) of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer (3) has a doped layer at an interface (13, 15) directed toward the heterojunction layer (5, 7), the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there. |
